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English: An atomic force microscope image of a simple circuit with 17 memristors lined up in a row. Each memristor has a bottom wire that contacts one side of the device and a top wire that contacts the opposite side. The devices act as ‘memory resistors’, with the resistance of each device depending on the amount of charge that has moved through each one. The wires in this image are 50 nm wide, or about 150 atoms in total width.
Nederlands: Een afbeelding gemaakt door een elektronenmicroscoop van simpele schakeling van 17 memristors op een rij. Elke memristor heeft een draad aan de onderkant die contact geeft aan de ene kant van de schakeling en een draad langs de bovenkant geeft contact aan de andere kant. De schakeling fungeert als een "geheugen weerstanden", de weerstand hangt af van hoeveel stroom er door elke memristor is gevloeid. De draden zijn 50 nm breed, ongeveer 150 atomen in totaal.
|Author||J. J. Yang, HP Labs.|
|Permission is granted to copy, distribute and/or modify this document under the terms of the GNU Free Documentation License, Version 1.2 or any later version published by the Free Software Foundation; with no Invariant Sections, no Front-Cover Texts, and no Back-Cover Texts.
Subject to disclaimers.
GNU Free Documentation License
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